AlGaN / GaN MBE 2 DEG Heterostructures : Interplay between Surface - , Interface - and Device - Properties
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منابع مشابه
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures
Smooth N-polar InGaN/GaN and AlGaN/GaN multiquantum wells MQWs and heterostructures were grown by metal organic chemical vapor deposition on 0001 sapphire substrates with misorientation angles of 2° –5° toward the a-sapphire plane. For all investigated structures the tendency toward formation of multiatomic steps at the film surface and at interfaces increased with increasing misorientation ang...
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110 The AlGaN/GaN heterstrostructures with its intrinsic two-dimensional electron gas (2DEG) is a promising materials system for high speed, high power, and high temperature electronics. Recently, it has been shown that the electron mobility (μ) of the 2DEG can exceed 50,000 cm2/Vs at low temperatures.1,2 Based on what is known about the 2DEG system in AlGaAs/GaAs heterostructures, growth morph...
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Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron...
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III-nitride high-electron mobility transistors (HEMTs) are in demand as commercial power amplifying devices based on their high breakdown field and high operating voltage, as well as wide band gap [1]. As opposed to the standard Ga-polar heterostructures, N-polar devices are better suited for sensors and enhancement mode transistors [2]; advantages include a strong back-barrier and low contact ...
متن کاملDependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 ...
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